Silicon-On-Insulator (SOI) Technology

2014-06-19
Silicon-On-Insulator (SOI) Technology

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  • Author: O. Kononchuk
  • Publisher: Elsevier
  • ISBN: 0857099256
  • Category : Technology & Engineering
  • Languages : en
  • Pages : 503

Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. - Covers SOI transistors and circuits, as well as manufacturing processes and reliability - Looks at applications such as memory, power devices, and photonics

Soi

2018-01-30
Soi

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  • Author: Brian Icenhower
  • Publisher: Createspace Independent Publishing Platform
  • ISBN: 9781981953721
  • Category :
  • Languages : en
  • Pages : 208

Like all Icenhower training books, SOI : Building A Real Estate Agent's Sphere of Influence training manual is for those real estate agents wanting to move from a mere real estate practice to a systematized real estate business with the control and mastery of your results. You are not an 'average agent', so you need to employ the tried and tested ways of the nation's Top Producers for always having an abundance of prospective buyers and sellers lined up - people who know who you are by name and 'brand', who come to you first to list their property or to show them their next new one. Regardless of your specialty, location or client base, we'll show you how to systematize your approach to SOI : Building A Real Estate Agent's Sphere of Influence and employ the tried and tested way of taking back control - or grabbing it perhaps for the first time - of your ability to generate a predictable number of Closed Transactions month after month. We'll show you step-by-step how to grow your results year after year, and do it with no gaps in productivity or slumps in transaction activity, as you approach your business's SOI Referral Database like a master.

SOI Circuit Design Concepts

2007-09-18
SOI Circuit Design Concepts

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  • Author: Kerry Bernstein
  • Publisher: Springer Science & Business Media
  • ISBN: 0387740996
  • Category : Technology & Engineering
  • Languages : en
  • Pages : 232

This book first introduces SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms, which are observed in common high-speed microprocessor designs. The book also offers rules of thumb and comparisons to conventional bulk CMOS to guide implementation and describes a number of unique circuit topologies that SOI supports.

SOI Design

2007-05-08
SOI Design

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  • Author: Andrew Marshall
  • Publisher: Springer Science & Business Media
  • ISBN: 0306481618
  • Category : Technology & Engineering
  • Languages : en
  • Pages : 410

This title introduces state-of-the-art design principles for SOI circuit design, and is primarily concerned with circuit-related issues. It considers SOI material in terms of implementation that is promising or has been used elsewhere in circuit development, with historical perspective where appropriate.

SOI Lubistors

2013-08-27
SOI Lubistors

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  • Author: Yasuhisa Omura
  • Publisher: John Wiley & Sons
  • ISBN: 1118487931
  • Category : Technology & Engineering
  • Languages : en
  • Pages : 294

Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors No comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs. The book provides, for the first time, a comprehensive understanding of the physics of the Lubistor. The author argues that a clear understanding of the fundamental physics of the pn junction is essential to allowing scientists and engineers to propose new devices. Since 2001 IBM has been applying the Lubistor to commercial SOI LSIs (large scale integrated devices) used in PCs and game machines. It is a key device in that it provides electrostatic protection to the LSIs. The book explains the device modeling for such applications, and covers the recent analog circuit application of the voltage reference circuit. The author also reviews the physics and the modeling of ideal and non-ideal pn junctions through reconsideration of the Shockley’s theory, offering readers an opportunity to study the physics of pn junction. Pn-junction devices are already applied to the optical communication system as the light emitter and the receiver. Alternatively, optical signal modulators are proposed for coupling the Si optical waveguide with the pn-junction injector. The book also explores the photonic crystal physics and device applications of the Lubistor. Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors Written by the inventor of the Lubistor, this volume describes the technology for readers to understand the physics and applications of the device First book devoted to the Lubistor transistor, presently being utilized in electrostatic discharge (ESD) applications in SOI technology, a growing market for semiconductor devices and advanced technologies Approaches the topic in a systematic manner, from physical theory, through to modelling, and finally circuit applications This is an advanced level book requiring knowledge of electrical and electronics engineering at graduate level. Contents includes: Concept of Ideal pn Junction/Proposal of Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistor (Lubistor)/ Noise Characteristics and Modeling of Lubistor/Negative Conductance Properties in Extremely Thin SOI Lubistors/ Two-Dimensionally Confined Injection Phenomena at Low Temperatures in Sub-10-nm-Thick SOI Lubistors/ Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors/ Gate-Controlled Bipolar Action in Ultra-thin Dynamic Threshold SOI MOSFET/Sub-Circuit Models of SOI Lubistors for Electrostatic Discharge Protection Circuit Design and Their Applications/A New Basic Element for Neural Logic Functions and Functionality in Circuit Applications/Possible Implementation of SOI Lubistors into Conventional Logic Circuits/Potentiality of Electro-Optic Modulator Based on SOI Waveguide/Principles of Parameter Extraction/Feasibility of Lubistor-Based Avalanche Photo Transistor

Low-Voltage SOI CMOS VLSI Devices and Circuits

2004-04-05
Low-Voltage SOI CMOS VLSI Devices and Circuits

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  • Author: James B. Kuo
  • Publisher: John Wiley & Sons
  • ISBN: 0471464171
  • Category : Technology & Engineering
  • Languages : en
  • Pages : 424

A practical, comprehensive survey of SOI CMOS devices and circuitsfor microelectronics engineers The microelectronics industry is becoming increasingly dependent onSOI CMOS VLSI devices and circuits. This book is the first toaddress this important topic with a practical focus on devices andcircuits. It provides an up-to-date survey of the current knowledgeregarding SOI device behaviors and describes state-of-the-artlow-voltage CMOS VLSI analog and digital circuit techniques. Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entirefield, from basic concepts to the most advanced ideas. Topicsinclude: * SOI device behavior: fundamental and floating body effects, hotcarrier effects, sensitivity, reliability, self-heating, breakdown,ESD, dual-gate devices, accumulation-mode devices, short channeleffects, and narrow channel effects * Low-voltage SOI digital circuits: floating body effects, DRAM,SRAM, static logic, dynamic logic, gate array, CPU, frequencydivider, and DSP * Low-voltage SOI analog circuits: op amps, filters, ADC/DAC,sigma-delta modulators, RF circuits, VCO, mixers, low-noiseamplifiers, and high-temperature circuits With over 300 references to the state of the art and over 300important figures on low-voltage SOI CMOS devices and circuits,this volume serves as an authoritative, reliable resource forengineers designing these circuits in high-tech industries.

Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications

2007-02-01
Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications

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  • Author: Takayasu Sakurai
  • Publisher: Springer Science & Business Media
  • ISBN: 0387292187
  • Category : Technology & Engineering
  • Languages : en
  • Pages : 420

Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of 0.5 V. The topics include the minimum required knowledge of the fabrication of SOI substrates; FD-SOI devices and the latest developments in device and process technologies; and ultralow-voltage circuits, such as digital circuits, analog/RF circuits, and DC-DC converters. Each ultra-low-power technique related to devices and circuits is fully explained using figures to help understanding.

Transient Floating-Body Effects for Memory Applications in Fully-Depleted SOI MOSFETs

2007
Transient Floating-Body Effects for Memory Applications in Fully-Depleted SOI MOSFETs

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  • Author: Maryline Bawedin
  • Publisher: Presses univ. de Louvain
  • ISBN: 9782874630880
  • Category : Science
  • Languages : en
  • Pages : 176

Memory devices based on floating-body effects (FBE) in Silicon-on-Insulator (SOI) technology are among the most promising candidates for sub-100nm and low power Dynamic Random Access Memory (DRAM). This new type of DRAMs, called Zero-Capacitor RAM (Z-RAM), uses only one transistor in partially-depleted (PD) SOI technology and takes advantage of FBE which have been considered as parasitic phenomena until now. The Z-RAM programming principles are based on the threshold voltage VTH variations induced by the excess or lack of majority carriers in the floating body. In this dissertation, a new floating-body effect, the Transient Floating Body Potential Effect (TFBPE), based on the body majority carriers non-equilibrium and on the dual dynamic gate coupling in standard fully-depleted (FD) SOI MOSFETs is presented for the first time. The TFBPE occurs in a specific gate bias range and can induce strong hysteresis of the gate and drain current characteristics although the FD SOI transistors are usually known to be immune against the FBE and their aftermaths. Adapted from the same physics principles as in the drain current hysteresis, that we called the Meta-Stable Dip (MSD) effect, a new concept of one-transistor capacitor-less memory was also proposed, the Meta-Stable DRAM (MSDRAM) which is dedicated for double-gate operations. All the experimental results and physics interpretations were supported by 2D numerical simulations. A 1D semi-analytical model of the body potential for non-equilibrium states was also proposed. For the first time, this original body-potential model takes into account the majority carriers density variations, i.e., the quasi-Fermi level non-equilibrium versus a transient gate voltage scan in a FD MOS device.

Le Soi et l’Autre

2011-05-10
Le Soi et l’Autre

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  • Author: Isabelle Ratié
  • Publisher: BRILL
  • ISBN: 900421643X
  • Category : Religion
  • Languages : en
  • Pages : 810

Recent scholarship on Śaivism has significantly expanded our knowledge of the religious dimensions of Medieval Śaiva movements. However, the philosophical aspects displayed by some of the texts produced in these milieux remain largely unrecognized. The present study helps fill this lacuna by exploring the sophisticated and original philosophical system elaborated by the Kashmiri Śaiva nondualists Utpaladeva (fl. c. 925-975) and Abhinavagupta (fl. c. 975-1025). The book shows that this system cannot be reduced to a mere scriptural exegesis and examines the genesis of the main concepts found in the Pratyabhijñā (“Recognition”) philosophy while taking into account the complexity of the philosophical field (already occupied by various currents, Buddhist as well as Brahmanical) in which Utpaladeva’s thought was developed. Si les récents travaux de recherche consacrés au śivaïsme ont permis de mieux comprendre les dimensions religieuses des mouvements śivaïtes médiévaux, les aspects proprements philosophiques de certains des textes produits dans ces milieux demeurent largement méconnus. La présenté étude se propose de contribuer à combler cette lacune en explorant le système philosophique complexe et original élaboré par les śivaïtes non dualistes cachemiriens Utpaladeva (925-975) et Abhinavagupta (975-1025). Montrant que ce système ne se réduit pas à une exégèse scripturaire, l’ouvrage examine la genèse des concepts de la philosophie de la Pratyabhijñā ou “Reconnaissance” en prenant en compte la complexité du champ philosophique (déjà investi par divers courants aussi bien bouddhiques que brahmaniques) dans lequel la pensée d’Utpaladeva s’est développée.

Radiation Imaging Detectors Using SOI Technology

2022-06-01
Radiation Imaging Detectors Using SOI Technology

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  • Author: Yasuo Arai
  • Publisher: Springer Nature
  • ISBN: 3031020332
  • Category : Technology & Engineering
  • Languages : en
  • Pages : 59

Silicon-on-Insulator (SOI) technology is widely used in high-performance and low-power semiconductor devices. The SOI wafers have two layers of active silicon (Si), and normally the bottom Si layer is a mere physical structure. The idea of making intelligent pixel detectors by using the bottom Si layer as sensors for X-ray, infrared light, high-energy particles, neutrons, etc. emerged from very early days of the SOI technology. However, there have been several difficult issues with fabricating such detectors and they have not become very popular until recently. This book offers a comprehensive overview of the basic concepts and research issues of SOI radiation image detectors. It introduces basic issues to implement the SOI detector and presents how to solve these issues. It also reveals fundamental techniques, improvement of radiation tolerance, applications, and examples of the detectors. Since the SOI detector has both a thick sensing region and CMOS transistors in a monolithic die, many ideas have emerged to utilize this technology. This book is a good introduction for people who want to develop or use SOI detectors.